US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Image sensor with epitaxial sealing layer for front-side deep trench isolation and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,747, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Image sensor with epitaxial sealing layer for front-side deep trench isolation and manufacturing method thereof" was invented by Yu-Hung Cheng (Tainan City, Taiwan), Szu-Yu Wang (Hsinchu City, Taiwan), Ching I Li (Tainan City, Taiwan) and Yong-Sheng Huang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a doped region in a substrate; forming a doped well vertically extending from a front side of the substrate into the doped region; forming a transfer gate over the front side of the substrate and l...