ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,910, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Hard mask layer and formation method thereof" was invented by Chih-Cheng Liu (Hsinchu, Taiwan), Wei-Zhong Chen (Taipei City, Taiwan), Chi-Ming Yang (Hsinchu City, Taiwan), Jr-Hung Li (Hsinchu County, Taiwan) and Yung-Cheng Lu (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes following steps. A target layer is formed over a substrate. A first hard mask layer is formed over the target layer by a plasma generated using a first radio frequency generator and a second radio frequency generator. The first radio fr...