US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "FinFET device structure with extra fin" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,669, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"FinFET device structure with extra fin" was invented by Yi Hong Wang (Taichung, Taiwan), Hui-Hsuan Kung (Taichung, Taiwan), Yi-Lii Huang (Hsinchu, Taiwan) and Chih-Hsiao Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a FinFET semiconductor including a first set of fin structures that are active, a source/drain (S/D) region in contact with the first set of fin structures, a second set of fin structures separated, via a shallow trench isolation (STI) feature, from the first set...