US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "FinFET device having flat-top epitaxial features and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,714, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET device having flat-top epitaxial features and method of making the same" was invented by Yi-Jing Lee (Hsinchu City, Taiwan), Li-Wei Chou (Hsinchu, Taiwan) and Ming-Hua Yu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor feature protruding from the substrate and extending lengthwise in a first direction, an epitaxial feature directly above the semiconductor feature, and a gate stack adjacent the epitaxial feature. The epitaxial feature comprises a lower portion ...