ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,985, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and forming method thereof" was invented by Min-Feng Kao (Chiayi City, Taiwan), Dun-Nian Yaung (Taipei City, Taiwan), Hsing-Chih Lin (Tainan City, Taiwan) and Jen-Cheng Liu (Hsin-Chu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first die and a second die. The first die includes a substrate, an interconnection structure and a capacitor structure. The substrate has a front-side surface and a back-side surface. The interconnection ...