US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Reducing parasitic capacitance in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,783, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Reducing parasitic capacitance in semiconductor devices" was invented by Chia-Ta Yu (New Taipei City, Taiwan), Hsiao-Chiu Hsu (Hsinchu City, Taiwan) and Feng-Cheng Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top p...