ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,756, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase change material (PCM) switch having low heater resistance" was invented by Hai-Dang Trinh (Hsinchu, Taiwan) and Fu-Ting Sung (Yangmei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed toward an integrated chip (IC). The IC comprises a dielectric structure disposed over a substrate. A phase change material (PCM) structure is disposed over the dielectric structure. A first conductive structure and a second conductive structure are disposed over and electrically coupled to th...