US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,762, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation" was invented by Tsung-Lin Lee (Hsinchu, Taiwan), Da-Wen Lin (Hsinchu, Taiwan) and Chih Chieh Yeh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device a fin structure is formed in which first semiconductor layers and second semiconductor layers are alternately stacked over a substrate. A sacrificial gate structure is formed over the fin structure. A source/drain regio...