ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,797, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate spacers in semiconductor devices" was invented by Shen-Yang Lee (Miaoli, Taiwan), Chun-Fu Lu (Hsinchu, Taiwan) and Hsiang-Pi Chang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a fin base on a substrate, forming a superlattice structure including first and second nanostructured layers on the fin base, forming a polysilicon structure on the superlattice structure, epitaxially growing a S/D region on the fi...