US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Conductive via with improved gap filling performance" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,971, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Conductive via with improved gap filling performance" was invented by Tzu-Yu Lin (Taoyuan, Taiwan) and Yao-Wen Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dielectric structure is formed over a layer than contains a conductive component. An opening is formed in the dielectric structure. The opening exposes an upper surface of the conductive component. A first deposition process is performed that deposits a first conductive layer over the dielectric structure and partially in the opening. A treatment process is perfor...