US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Through-dielectric vias for direct connection and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,871, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Through-dielectric vias for direct connection and method forming same" was invented by Ming-Fa Chen (Taichung City, Taiwan), Chuan-An Cheng (Zhubei City, Taiwan), Sung-Feng Yeh (Taipei City, Taiwan) and Chih-Chia Hu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes bonding a tier-1 device die to a carrier, forming a first gap-filling region to encapsulate the tier-1 device die, forming a first redistribution structure over and electrically connected to the tier-1 device die, and bonding a tier-2 device die to ...