ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,579, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming thereof" was invented by Li-Zhen Yu (New Taipei City, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei City, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan) and Huan-Chieh Su (Tianzhong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a device layer including a first transistor, a first interconnect structure on a front-side of the device layer, and a second interconnect structure on a backside of the device layer. The second interconnect structure...