US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Interconnection structure lined by isolation layer" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,809, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnection structure lined by isolation layer" was invented by Hsin-Liang Chen (Hsin-Chu, Taiwan), Chun-Yen Yeh (Hsin-Chu, Taiwan), Yu-Hsin Fang (Hsinchu City, Taiwan) and Han-Tang Lo (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the f...