US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "High sensitivity ISFET sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,607,595, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High sensitivity ISFET sensor" was invented by Katherine H. Chiang (New Taipei City, Taiwan), Jui-Cheng Huang (Hsinchu City, Taiwan), Ke-Wei Su (Zhubei City, Taiwan), Tung-Tsun Chen (Hsinchu City, Taiwan), Wei Lee (Hsinchu City, Taiwan) and Pei-Wen Liu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of ...