US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor structure having deep trench capacitor and method of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,487, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having deep trench capacitor and method of manufacturing thereof" was invented by Chih-Hsuan Tai (Taipei City, Taiwan) and Hsiang-Tai Lu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate including a recess indented into the substrate, a capacitor structure at least partially disposed within the recess, and an interconnect structure disposed over and electrically connected to the capacitor structure. The capacitor structure includes a first electrode l...