US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 14 for "Semiconductor device structure with inner spacer layer" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,515, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with inner spacer layer" was invented by Ching-Wei Tsai (Hsinchu, Taiwan), Yu-Xuan Huang (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-chu, Taiwan), Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan), Min Cao (Hsinchu, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Pei-Hsun Wang (Kaohsiung, Taiwan) and Kuo-Cheng Chiang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a su...