ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,677, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of manufacturing" was invented by Fu-Ting Sung (Yangmei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by a combination of one or more layers including an isolation layer. The cell structure may be patterned using a metal line below the cell structure as an etch-stop layer. Relative to other techniques that include patterning the cell structure using a silicon carbide layer l...