US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Interlevel dielectric structure in semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,725, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interlevel dielectric structure in semiconductor device" was invented by Chia-Cheng Chou (Keelung City, Taiwan), Chung-Chi Ko (Nantou, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Ming-Tsung Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is great...