US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,480, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and method of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a memory layer over a substrate; a first source/drain structure and a second source/drain structure on the memory layer, wherein the first source/drain structure and the second source drain structure each include a first source/drain layer on the memory layer; a second source...