US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Deep trench capacitor (DTC) region in semiconductor package" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,741, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deep trench capacitor (DTC) region in semiconductor package" was invented by Fu-Chiang Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate and a deep trench capacitor (DTC) region formed in the substrate. The DTC region includes a plurality of DTC units, and each DTC unit includes: a trench extending downwardly from a top surface of the substrate; a first conductive layer disposed in the trench; a second conductive layer disposed in the trench...