US Patent Issued to Taiwan Semiconductor Manufacturing Comapny on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,675, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Comapny Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Tien-Shun Chang (New Taipei City, Taiwan), Chun-Feng Nieh (Hsinchu City, Taiwan), Huicheng Chang (Tainan City, Taiwan) and Yee-Chia Yeo (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device, comprises the following steps: providing a semiconductor substrate; forming a dummy insulation layer and a dummy electrode sequentially stacked on the semiconductor substrate; forming spacers on sidewalls of the dummy electro...