US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC CHINA on Nov. 3 for "Method for manufacturing capacitor structure" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,312, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Method for manufacturing capacitor structure" was invented by Qinghui Zheng (Shanghai City, China), Yonghao Fu (Shanghai City, China) and Yuzhe Lin (Shanghai City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a bottom electrode of a capacitor over a substrate; depositing an isolation dielectric layer of the capacitor over the bottom electrode; and forming a top electrode of the capacitor over the isolation dielectric layer. Depositing the isolation dielectric layer includes...