US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL YANG MING CHIAO TUNG UNIVERSITY on July 14 for "Semiconductor device having source/drain contacts connecting 2-D material layer and method for forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,042, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan).

"Semiconductor device having source/drain contacts connecting 2-D material layer and method for forming the same" was invented by Shu-Jui Chang (Hsinchu County, Taiwan), Shin-Yuan Wang (Chiayi City, Taiwan), Yu-Che Huang (Taipei City, Taiwan), Chun-Liang Lin (Hsinchu City, Taiwan), Chao-Hsin Chien (Hsinchu City, Taiwan) and Chenming Hu (Oakland, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a 2-D material layer over a substrate, wherein the 2-D...