US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,370, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shih-Yen Lin (New Taipei City, Taiwan), Po-Cheng Tsai (Taichung City, Taiwan) and Che-Jia Chang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a 2-D material channel layer, a gate structure, and source/drain electrodes. The gate structure is over a channel region of the 2-D material channel layer. The source/drain electrodes are over source/drain regions of the 2-D material c...