US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on March 24 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,181, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device and method for forming the same" was invented by Hsin-Cheng Lin (Taipei City, Taiwan), Tao Chou (New Taipei City, Taiwan) and Chee-Wee Liu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first pull-down transistor, a first pass-gate transistor, a second pull-down transistor, a second pass-gate transistor, a first pull-up transistor, and a second pull-up transistor. A first power line, a first bit line, and a second bit line is provide...