US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on March 17 for "Memory device and operation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,014, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device and operation method thereof" was invented by Kuo-Yu Hsiang (Kaohsiung City, Taiwan) and Min-Hung Lee (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes multiple first memory cells each having a first terminal coupled to a first node and a second terminal coupled to a corresponding one in multiple first bit lines; multiple second memory cells each having a first terminal coupled to a second node and a second terminal coupled to a corre...