US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITY on March 24 for "Integrated circuit device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,214, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan), NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan) and NATIONAL TAIWAN NORMAL UNIVERSITY (Taipei City, Taiwan).

"Integrated circuit device and method for fabricating the same" was invented by Kuo-Yu Hsiang (Kaohsiung City, Taiwan), Chun-Yu Liao (Taipei City, Taiwan), Jen-Ho Liu (Taipei City, Taiwan) and Min-Hung Lee (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectr...