US Patent Issued to TAIWAN SEMICONDICTOR MANUFACTURING on April 14 for "Metal capping layer for reducing gate resistance in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Metal capping layer for reducing gate resistance in semiconductor devices" was invented by Wei-Cheng Wang (Hsinchu County, Taiwan), Shih-Hang Chiu (Taichung City, Taiwan), Kuan-Ting Liu (Hsinchu City, Taiwan), Chi On Chui (Hsinchu City, Taiwan), Chia-Wei Chen (Hsinchu, Taiwan) and Jian-Hao Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor fin protruding from a substrate; a gate structure engaging with the semiconductor fin. The semiconductor structure also includes an ...