US Patent Issued to TAIWAN SEMICONDCUTOR MANUFACTURING on June 16 for "Interconnect structure having a multi-deck conductive feature and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,291, issued on June 16, was assigned to TAIWAN SEMICONDCUTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Interconnect structure having a multi-deck conductive feature and method of forming the same" was invented by Shih-Chuan Chiu (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu City, Taiwan), Cheng-Chi Chuang (New Taipei City, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Yu-Ming Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device structure that includes: a fin active region extruded above a semiconductor substrate; a gate stack disposed on the fin active region, wherein the...