US Patent Issued to TAIWAN SEMCONDUCTOR MANUFACTURING on Aug. 4 for "Integrated circuit with a gate structure and method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,781, issued on Aug. 4, was assigned to TAIWAN SEMCONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuit with a gate structure and method making the same" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Ying-Keung Leung (Hsinchu City, Taiwan) and Chi On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin structure on a substrate; a first gate stack and a second gate stack formed on the fin structure; a dielectric material layer disposed on the first and second gate stacks, wherein the dielectric layer i...