US Patent Issued to TAIWAN-ASIA SEMICONDUCTOR on Sept. 1 for "Light-emitting diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,287, issued on Sept. 1, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan).

"Light-emitting diode structure" was invented by Kun-Te Lin (Hsinchu City, Taiwan), Kuo-Chen Wu (Hsinchu City, Taiwan) and Ching-Shih Ma (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a light-emitting diode structure, comprising a substrate, a first semiconductor layer, a second semiconductor layer, a second electrode and at least one current blocking trench. The substrate includes a first electrode. The first semiconductor layer is located on the substrate. The second semiconductor layer is located on ...