US Patent Issued to TAIWAN-ASIA SEMICONDUCTOR on Nov. 3 for "High electron mobility transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,342, issued on Nov. 3, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan).

"High electron mobility transistor" was invented by Yen-Chun Tseng (Hsinchu City, Taiwan), Tzu-Wen Wang (Hsinchu City, Taiwan) and Chuan-Wei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a gallium nitride layer, a two-dimensional material structure, a covering layer, a drain, a source and a gate. The buffer layer is located on the substrate. The gallium nitride layer is located on the buffer layer and forms a channel la...