US Patent Issued to TAIWAN-ASIA SEMICONDUCTOR on Aug. 25 for "Structure of ultraviolet light sensing-enhanced photodiode" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,907, issued on Aug. 25, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan).

"Structure of ultraviolet light sensing-enhanced photodiode" was invented by Chuan-Wei Chen (Hsinchu City, Taiwan) and Yen-Chun Tseng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a structure of an ultraviolet light sensing-enhanced photodiode. The main structure of the photodiode includes a silicon photodiode and an infrared conversion layer formed on a surface that receives an ultraviolet light of the of the silicon photodiode. When the ultraviolet light irradiates on the ultraviolet light sensing-e...