US Patent Issued to Synopsys on March 31 for "Non-retention mode leakage reduction without impacting the cell content in the retention mode" (Indian Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,274, issued on March 31, was assigned to Synopsys Inc. (Sunnyvale, Calif.).

"Non-retention mode leakage reduction without impacting the cell content in the retention mode" was invented by Gaurav Gupta (New Delhi) and Sanjay Kumar Yadav (Noida, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for non-retention mode leakage reduction without impacting cell content in a retention mode. A plurality of power gate circuits provide power to respective regions of memory cells. The power gate circuits may be placed physically proximate to the respective regions of the memory cells, and the control circuitry may be placed in a central location...