US Patent Issued to SWAYSURE TECHNOLOGY on June 23 for "Memory cell, memory, and method of manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,589, issued on June 23, was assigned to SWAYSURE TECHNOLOGY Co. LTD. (Shenzhen, China).

"Memory cell, memory, and method of manufacturing the same" was invented by Jinghao Wang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell is provided in an isolation layer on a side of a substrate, the isolation layer includes an accommodation hole, the memory cell includes a channel layer, an insulating dielectric layer, a gate layer and a gate dielectric layer. The channel layer includes a first channel and a second channel spaced apart and stacked, the first channel is provided in the accommodation hole, the second channel is at le...