US Patent Issued to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY on Sept. 8 for "Transistor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,226, issued on Sept. 8, was assigned to SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY Co. LTD. (Suzhou, China).

"Transistor device and manufacturing method thereof" was invented by Jinwei Qi (Suzhou, China) and Yaohui Zhang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a transistor device and a manufacturing method thereof. The transistor device includes a gate, a gate insulator, and a drift region stacked with the body region in a first direction, the gate insulator covers the bottom surface and at least a portion of the side surface of the gate, the body region covers a portion of the sidewall of the gate insulator, and ...