US Patent Issued to SUN YAT-SEN UNIVERSITY on July 21 for "GaN-based trench metal oxide Schottky barrier diode and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,204, issued on July 21, was assigned to SUN YAT-SEN UNIVERSITY (Guangdong, China).

"GaN-based trench metal oxide Schottky barrier diode and preparation method therefor" was invented by Yang Liu (Guangdong, China) and Yuhao Zhou (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a GaN-based trench metal oxide Schottky barrier diode and a preparation method therefor. The device structure from bottom to top includes: an ohmic contact metal layer covering a substrate i.e., cathode; a GaN self-supporting substrate; an n-type lightly doped epitaxial layer; a p-type high-concentration GaN layer arranged in parallel; a...