US Patent Issued to Sumitomo Electric Industries on Sept. 1 for "Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,400, issued on Sept. 1, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device" was invented by Hiroki Nishihara (Osaka, Japan), Tsubasa Honke (Osaka, Japan), Takaya Miyase (Osaka, Japan) and Taro Enokizono (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. A plurality of square regions are constituted of a plurality of outer peripheral regions located at an outermost periphery of the plurality of square regions and ...