US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on March 3 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,665, issued on March 3, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"Silicon carbide semiconductor device" was invented by Yu Saitoh (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide substrate having first and second main surfaces and including an electric field relaxation region and a connection region. A gate trench provided in the first main surface is defined by side surfaces and a bottom surface. The electric field relaxation region is a second conductivity type and provided between the bottom surface and the second main surface, and the connectio...