US Patent Issued to SUMITOMO ELECTRIC INDUSTRIES on June 30 for "High electron mobity transistor with gradient aluminum composition in barrier layer" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,303, issued on June 30, was assigned to SUMITOMO ELECTRIC INDUSTRIES LTD. (Osaka, Japan).

"High electron mobity transistor with gradient aluminum composition in barrier layer" was invented by Shigeki Yoshida (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including: a substrate; a channel layer that is provided on the substrate and that includes Ga and N; and a barrier layer that is provided on the channel layer and includes a first surface that faces the channel layer and a second surface opposite to the first surface, the barrier layer containing Al, N, and at least one of Ga or In; wherein an average value of a...