US Patent Issued to Sumitomo Electric Industries on July 21 for "Gallium arsenide single crystal substrate and method of producing same" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,946, issued on July 21, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Gallium arsenide single crystal substrate and method of producing same" was invented by Yuichiro Miyazaki (Hyogo, Japan), Koichiro Aoyama (Hyogo, Japan), Tatsuya Moriwake (Hyogo, Japan) and Katsushi Hashio (Hyogo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium arsenide single crystal substrate is a gallium arsenide single crystal substrate having a main surface having a circular shape, wherein an average value of a dislocation density of the main surface is 5 cm-2 or more and 100 cm-2 or less, and in an imaginary grid formed by laying out squar...