ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,556,141, issued on Feb. 17, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).
"High-frequency device and Doherty amplifier" was invented by Tatsuya Hashinaga (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high-frequency device includes a metal base, a dielectric substrate mounted on the metal base, an insulator layer provided on the metal base, covering the dielectric substrate, and having a dielectric constant smaller than that of the dielectric substrate, and a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator ...