US Patent Issued to Sumitomo Electric Device Innovations on Oct. 27 for "Semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,693, issued on Oct. 27, was assigned to Sumitomo Electric Device Innovations Inc. (Yokohama, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Takuma Nakano (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a silicon carbide substrate, a nitride semiconductor layer provided on a top surface of the silicon carbide substrate, a transistor provided on the nitride semiconductor layer, and an element provided on or above the silicon carbide substrate, wherein the silicon carbide substrate has a hole that is provided between the transistor and the element, the hole is formed ...