US Patent Issued to Sumitomo Electric Device Innovations on March 31 for "HEMT device with crystallinity control film" (Japanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,490, issued on March 31, was assigned to Sumitomo Electric Device Innovations Inc. (Kanagawa, Japan).

"HEMT device with crystallinity control film" was invented by Yukinori Nose (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer and having a first opening formed therein, a gate electrode disposed on the insulating layer and in contact with the semiconductor layer via the first opening, and a source electrode and a drain electrode in ohmic contact with the semiconductor layer. The gate ele...