US Patent Issued to Sumitomo Chemical on July 28 for "Gallium nitride single crystal substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,625, issued on July 28, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo).

"Gallium nitride single crystal substrate" was invented by Takashi Sato (Hitachi, Japan), Tetsuji Fujimoto (Hitachi, Japan), Toshio Kitamura (Hitachi, Japan) and Masatomo Shibata (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate that has a diameter of 50 mm or more and whose low index crystal plane closest to a main surface is a (0001) plane, wherein a density of etch pits when applying etching to the main surface with an alkaline etching solution is...