ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,846, issued on July 14, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo).

"Multilayered substrate" was invented by Yoshinobu Narita (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayered substrate comprises: an underlying substrate; and a gallium nitride layer epitaxially grown above the underlying substrate and comprising gallium nitride doped with silicon; the gallium nitride layer having a top surface with a radius of 50 mm or more, the gallium nitride layer having a thickness of 4 micro metre or more, wherein a silicon concentration in the top surface of the gallium nitride layer has a distribution in which an outer circ...