US Patent Issued to Sumitomo Chemical on April 7 for "Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure" (Japanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,588, issued on April 7, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo).

"Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure" was invented by Takehiro Yoshida (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor including a step of preparing a base substrate; a first step of epitaxially growing a single crystal of a group III nitride semiconductor having a top surface with (0001) plane exposed, directly on the main surface of the base substrate, forming a plurality of concaves composed of inclined interfaces other than the (0001) plane on t...