US Patent Issued to SUMCO on June 23 for "Silicon single crystal growing method" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,748, issued on June 23, was assigned to SUMCO Corp. (Tokyo).

"Silicon single crystal growing method" was invented by Takashi Izeki (Nagasaki, Japan) and Yasuhito Narushima (Nagasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a growing method of monocrystalline silicon including: pulling up monocrystalline silicon from a dopant-added melt in which a dopant is added to a silicon melt and growing the monocrystalline silicon according to Czochralski process, in which the monocrystalline silicon is grown by calculating a critical CV value, which is a product of a dopant concentration C and a pull-up speed V at a point of time...