US Patent Issued to SUMCO on June 23 for "Method of evaluating silicon single-crystal ingot, method of evaluating silicon epitaxial wafer, method of manufacturing silicon epitaxial wafer, and method of evaluating silicon mirror polished wafer" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,663,383, issued on June 23, was assigned to SUMCO Corp. (Tokyo).

"Method of evaluating silicon single-crystal ingot, method of evaluating silicon epitaxial wafer, method of manufacturing silicon epitaxial wafer, and method of evaluating silicon mirror polished wafer" was invented by Jun Furukawa (Yamagata, Japan), Kazuya Suzuki (Yamagata, Japan), Keiichiro Mori (Saga, Japan) and Takahiro Nagasawa (Saga, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of evaluating a silicon single-crystal ingot, the method including cutting out three or more plural silicon wafers from the ingot to be evaluated; mirror polishing the plural silicon wafers to...