US Patent Issued to SUMCO on April 14 for "Method for manufacturing group III nitride semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,680, issued on April 14, was assigned to SUMCO Corp. (Tokyo).

"Method for manufacturing group III nitride semiconductor substrate" was invented by Koji Matsumoto (Tokyo), Toshiaki Ono (Tokyo), Hiroshi Amano (Aichi, Japan) and Yoshio Honda (Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor lay...